Year: 2019
Type: article
Abstract: Domain walls in ferroelectric materials have tantalizing potential in disruptive memory and reconfigurable nanoelectronics technologies. Here, a ferroelectric domain wall switch with three distinct addressable resistance states is demonstrated. The device operation hinges on fully controllable and reversible conformational changes of the domain wall. As validated by atomistic simulations consistent with the experiments, using electric field, the shape—and hence the charge state—of the domain wall and ultimately its conduction are altered. Sequential nanoscale transitions of the walls are visualized directly using stroboscopic‐piezoresponse force microscopy and Kelvin probe microscopy. Anisotropic head‐to‐head domain wall injection, stabilized by the majority carrier type of the ferroelectric, BiFeO3, is identified as the key factor that enables conformational control.
Source: Advanced Functional Materials
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funders: U.S. Department of Energy, University of Pennsylvania, Australian National Fabrication Facility, Pennsylvania State University, University of New South Wales, Defense Advanced Research Projects Agency, Australian Research Council, Office of Naval Research, Basic Energy Sciences, Division of Materials Sciences and Engineering
Awards: STRUCTURE AND DYNAMICS OF DOMAINS IN FERROELECTRIC NANOSTRUCTURES, G222768804, G2719611543, G388596602, G4504108201, G5196042664, G5233849751, G5648016710, ARC Centre of Excellence in Future Low Energy Electronics Technologies, G7223266946, PROPERTIES OF MULTIFERROIC NANOSTRUCTURES FROM FIRST PRINCIPLES, STRUCTURE AND DYNAMICS OF DOMAINS IN FERROELECTRIC NANOSTRUCTURES, G8876996369
OpenAlex ID: W2922242425