Work

Advances in InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs)

Year: 2019

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.7567/1347-4065/ab02e6

Authors: Colombo R Bolognesi, Wei Quan, Akshay M Arabhavi, Tamara Saranovac, Ralf Flückiger, Olivier Ostinelli, Xin Wen, Mathieu Luisier

Institutions: ETH Zurich, Integrated Systems Laboratory

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Branco Weiss Fellowship – Society in Science, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Award: ULTIMATE: Upper Limit Technology Investigations Mandatory to Attain Terahertz Electronics

OpenAlex ID: W2923979666

FWCI: 0.45

Cites: 28

Cited by: 8

Related to: 10