Work

Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?

Year: 2000

Type: article

Source: MRS Internet Journal of Nitride Semiconductor Research

DOI: 10.1557/s1092578300004506

Authors: J. Deng, R. Gaska, M. S. Shur, M. A. Khan, J. W. Yang

Institutions: Rensselaer Polytechnic Institute, University of South Carolina

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funder: Office of Naval Research

OpenAlex ID: W2936710672

FWCI:

Cites: 7

Cited by: 3

Related to: 10