Work

Gate-first process compatible, high-quality in situ SiN x for surface passivation and gate dielectrics in AlGaN/GaN MISHEMTs

Year: 2019

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/ab1dc3

Authors: Liang Cheng, Weizong Xu, Danfeng Pan, Youhua Zhu, Fangfang Ren, Dong Zhou, Jiandong Ye, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu

Institutions: Nanjing University, Nantong University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G548849713, G5798336037

OpenAlex ID: W2943563775

FWCI: 0.782

Cites: 38

Cited by: 15

Related to: 10