Work

Low-temperature formation of high-mobility a-InGaZnOx films using plasma-enhanced reactive processes

Year: 2019

Type: article

Abstract: This work demonstrated the low-temperature fabrication of high-mobility a-InGaZnOx (a-IGZO) films using plasma-enhanced reactive processing. The effect of the post-processing temperature on the performance of IGZO thin-film transistors (TFTs) using these a-IGZO films as a channel layer was also investigated. IGZO TFTs incorporating a-IGZO films plasma-treated at temperatures as low as 200 °C exhibited the expected TFT transfer characteristics, with field effect mobility values as high as 40 cm 2 V −1 s −1 . The fabrication of IGZO TFTs that exhibited homogeneous characteristics over large substrate areas was attempted, by assessing the effects of the plasma treatment on a-IGZO films deposited at various oxygen flow rate ratios. The electrical properties of IGZO TFTs using plasma-treated films were found to be dramatically improved, irrespective of the film deposition conditions prior to the plasma treatment. These results confirm the feasibility of producing IGZO TFTs with uniform characteristics over large substrates areas.

Source: Japanese Journal of Applied Physics

DOI: 10.7567/1347-4065/ab219c

Authors: Kosuke Takenaka, Masashi Endo, Hiroyuki Hirayama, Giichiro Uchida, Akinori Ebe, Yuichi Setsuhara

Institutions: Joining and Welding Research Institute, The University of Osaka, EMD Corporation (Japan)

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funder: Japan Society for the Promotion of Science

Award: Development of advanced reactive plasma-enhanced processes for low-temperature large-area formation of next-generation oxide semiconductor devices