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Improved crystal quality of nonpolar a-plane GaN based on the nano pattern formed by the annealed thin Ni layer

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Year: 2019
Type: article
Source: Superlattices and Microstructures
DOI: 10.1016/j.spmi.2019.05.020
Authors: Hongchang Tao, Shengrui Xu, Wei Mao, Xiaomeng Fan, Jinjuan Du, Ruoshi Peng, Ying Zhao, Wen Li, Yuan Gao, Jincheng Zhang, Yue Hao
Institution: Xidian University
Language: English

Topic: GaN-based semiconductor devices and materials
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities
Awards: G2258735352, G2330883130, G4145518219, GaN基功率器件基础问题研究
OpenAlex ID: W2945238667
FWCI: 0.223
Cites: 33
Cited by: 4
Related to: 10
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