Work

Physical mechanisms involved in the formation and operation of memory devices based on a monolayer of gold nanoparticle-polythiophene hybrid materials

Year: 2019

Type: article

Abstract: Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a requisite for better performance.

Source: Nanoscale Advances

DOI: 10.1039/c9na00285e

Authors: T. Zhang, D. Guérin, F. Alibart, D. Troadec, D. Hourlier, G. Patriarche, A. Yassin, M. Oçafrain, P. Blanchard, J. Roncali, D. Vuillaume, K. Lmimouni, S. Lenfant

Institutions: Centre National de la Recherche Scientifique, Université de Lille, Institut d'Electronique, de Microélectronique et de Nanotechnologie, Université Paris-Saclay, Centre de Nanosciences et de Nanotechnologies, Institut des Sciences et Technologies Moléculaires d'Angers, Université d'Angers

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,962

Funders: Agence Nationale de la Recherche, H2020 Future and Emerging Technologies

Awards: G4147387651, G5160884725, G583331004, SYNAPse-like transisTOR and circuits for neuro-inspired computing architecture

OpenAlex ID: W2945439129

FWCI: 0.539

Cites: 38

Cited by: 13

Related to: 10