A Dual-Band High Efficiency Class-F GaN HEMT Power Amplifier for Wireless Communication
Year: 2019
Type: article
Source: IETE Journal of Research
Authors: Sh. Rezaei Borjlu, M. S. Khadem
Institution: Islamic Azad University, Ashtian Branch
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2946585572
