Work

$\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

Year: 2019

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2019.2920366

Authors: Zhanbo Xia, Hao Xue, Chandan Joishi, Joe Mcglone, Nidhin Kurian Kalarickal, Shahadat H. Sohel, Mark Brenner, Aaron Arehart, Steven Ringel, Saurabh Lodha, Wu Lu, Siddharth Rajan

Institutions: The Ohio State University, Indian Institute of Technology Bombay

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Defense Threat Reduction Agency

Awards: G3228853530, Beta-Gallium Oxide Transistors for High Frequency Applications

OpenAlex ID: W2948544787

FWCI: 7.289

Cites: 35

Cited by: 162

Related to: 10