Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal
Year: 2019
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.5096889
Institution: Laser Systems & Solutions of Europe (France)
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2948814545