Reactive intercalation and oxidation at the buried graphene-germanium interface
Year: 2019
Type: article
Abstract: We explore a number of different electrochemical, wet chemical, and gas phase approaches to study intercalation and oxidation at the buried graphene-Ge interface. While the previous literature focused on the passivation of the Ge surface by chemical vapor deposited graphene, we show that particularly via electrochemical intercalation in a 0.25 N solution of anhydrous sodium acetate in glacial acetic acid, this passivation can be overcome to grow GeO2 under graphene. Angle resolved photoemission spectroscopy, Raman spectroscopy, He ion microscopy, and time-of-flight secondary ion mass spectrometry show that the monolayer graphene remains undamaged and its intrinsic strain is released by the interface oxidation. Graphene acts as a protection layer for the as-grown Ge oxide, and we discuss how these insights can be utilized for new processing approaches.
Source: APL Materials
DOI: 10.1063/1.5098351
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,200
Awards: National Hub in High Value Photonic Manufacturing, G2009113792, Advancing Rechargeable-Batteries Through In Situ Techniques, Scalable manufacture and device integration of novel 2D materials & heterostructures, Graphene Sensors for Food Allergen Detection, G4004953463, G434337789, G4454044550, G4958715960, Silicon Photonics for Future Systems, Advancing Rechargeable-Batteries Through In Situ Techniques, Cambridge NanoScience through Engineering to Application Doctoral Training Centre: Assembly of Functional NanoMaterials and NanoDevices, G7807381469, CVD enabled Graphene Technology and Devices (GRAPHTED), G7952615076, G8025026951, DTA - University of Cambridge, G976823522
OpenAlex ID: W2950368591