Response to Comments on E. Huttunen-Saarivirta et al., “Kinetic Properties of the Passive Film on Copper in the Presence of Sulfate-Reducing Bacteria” [J. Electrochem. Soc., 165, C450 (2018)]
Year: 2019
Type: article
Abstract: The Comments by Martino et al. 1 on the original manuscript 2 criticize our interpretation of the existence and properties of the Cu 2 S barrier layer of the passive film that forms on the surface of copper in SRB-bearing groundwater at 10°C. First, it is necessary to recognize that this discussion involves two forms of copper, which we refer to as "pure copper (P-Cu)" (nominally > 99.999%) and "oxygen-free phosphorous copper (OFP-Cu)". P-Cu has been used in the majority of our work 3 – 6 with only some of our later work employing OFP-Cu, 2 a point that does not seem to be appreciated by Martino et al. 1 On the other hand, the Shoesmith group appears to have concentrated exclusively upon OFP-Cu, at least in recent years. 7 – 11 This difference is of crucial importance in responding to the critique by Martino et al. 1
DOI: 10.1149/2.0771910jes
Authors: E. Huttunen-Saarivirta, P. Rajala, L. Carpén, J. Wang, F. Liu, E. Ghanbari, F. Mao, C. Dong, J. Yang, S. Sarifi-Asl, D. D. Macdonald
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2951887820