Tl2Hg3Q4 (Q = S, Se, and Te): High-Density, Wide-Band-Gap Semiconductors
Year: 2011
Type: article
Source: Chemistry of Materials
DOI: 10.1021/cm2019857
Authors: Simon Johnsen, Sebastian C. Peter, Sandy L. Nguyen, Jung-Hwan Song, Hosub Jin, Arthur J. Freeman, Mercouri G. Kanatzidis
Institution: Northwestern University
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2952022230