Work

Observation of dislocations in high-quality homoepitaxial AlN layers grown by HVPE on PVT-AlN substrates

Year: 2019

Type: article

Source: OPTICS & PHOTONICS International Congress

Author: Yudai Shimizu

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2953372389

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