Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 μm
Year: 2019
Type: article
Abstract: We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and 8 μm.Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1-mm-long Mach-Zehnder modulator has a V π • L of 0.47 V • cm.Driven by a 2.5V pp RF signal, 60 MHz on-off keying modulation was demonstrated.Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.
Source: Photonics Research
DOI: 10.1364/prj.7.000828
Institutions: University of Southampton, Centre National de la Recherche Scientifique, Université Paris-Saclay, Centre de Nanosciences et de Nanotechnologies, Peking University, State Key Laboratory of Advanced Optical Communication Systems and Networks, State Key Laboratory of Advanced Optical Communication Systems and Networks
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Funders: Royal Academy of Engineering, Royal Society, National Research Foundation Singapore, China Scholarship Council, State Key Laboratory of Advanced Optical Communication Systems and Networks, Seventh Framework Programme, Engineering and Physical Sciences Research Council, H2020 European Research Council
Awards: National Hub in High Value Photonic Manufacturing, G2135211347, University of Southampton - Equipment Account, CORNERSTONE: Capability for OptoelectRoNics, mEtamateRialS, nanoTechnOlogy aNd sEnsing, Electronic-Photonic Convergence: A Platform Grant, G492839145, G5538663628, G63770550, G6390040927, Cornerstone: Mechanical Engineering Science to Enable Aero Propulsion Futures
OpenAlex ID: W2955899552