Work

Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices

Year: 2019

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.9b00266

Authors: Matthew R. Peart, Xiongliang Wei, Damir Borovac, Wei Sun, Nelson Tansu, Jonathan J. Wierer

Institution: Lehigh University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Division of Materials Research, Division of Electrical, Communications and Cyber Systems

Awards: G2741641148, G4626415821, G927262128

OpenAlex ID: W2960460652

FWCI: 1.005

Cites: 22

Cited by: 20

Related to: 10