Work

Design and Analog Performance Analysis of Triple Material Gate Based Doping-Less Tunnel Field Effect Transistor

Year: 2019

Type: article

Source: Journal of Nanoelectronics and Optoelectronics

DOI: 10.1166/jno.2019.2662

Authors: Umar Mushtaq, Leo Raj Solay, S. Intekhab Amin, Sunny Anand

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2961027217

FWCI: 0.813

Cites:

Cited by: 20

Related to: 10