Work

Effects of Tantalum Doping on Electrical Characteristics of High-Mobility Zinc Oxynitride Thin-Film Transistors

Year: 2019

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2019.2930062

Authors: Hiroshi Tsuji, Tatsuya Takei, Mitsuru Nakata, Masashi Miyakawa, Yoshihide Fujisaki

Institution: Japan Broadcasting Corporation (Japan)

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2962929918

FWCI: 0.813

Cites: 15

Cited by: 13

Related to: 10