Work

Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening

Year: 2015

Type: article

Abstract: By combining a high-κ dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened, leading to an unprecedented room-temperature mobility of ≈150 cm(2) V(-1) s(-1) and room-temperature phonon-limited transport in a monolayer MoS2 transistor for the first time.

Source: Advanced Materials

DOI: 10.1002/adma.201503033

Authors: Zhihao Yu, Zhun‐Yong Ong, Yiming Pan, Yang Cui, Run Xin, Yi Shi, Baigeng Wang, Yun Wu, Tangsheng Chen, Yong‐Wei Zhang, Gang Zhang, Xinran Wang

Institutions: Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Institute of High Performance Computing

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: National Natural Science Foundation of China, Priority Academic Program Development of Jiangsu Higher Education Institutions

Awards: G2025644642, G2602045964, G5489589157, 石墨烯纳米带的边缘效应及器件应用研究

OpenAlex ID: W2963035958

FWCI: 8.664

Cites: 36

Cited by: 287

Related to: 10