Al composition and AlxInyGazN layer thickness dependent new analytical model for I-V characteristics of AlxInyGazN/GaN HEMTs
Year: 2019
Type: article
Source: Materials Today Proceedings
Institutions: Devi Ahilya Vishwavidyalaya, IPS Academy
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2963480177