Work

Argon Bombardment of 4H Silicon Carbide Substrates for Tailored Schottky Diode Barrier Heights

Year: 2019

Type: article

Abstract: In this paper, the impact of substrate preconditioning by ion bombardment in-situ in a conventional sputter equipment on n-doped 4H-silicon carbide (SiC) Schottky diodes with molybdenum nitride metallization is studied. By variation of the plasma power during argon ion bombardment, the effective barrier height is adjustable in the range from 0.66 to 0.96 eV, as deduced by current / voltage measurements over a wide temperature range. Therefore, this approach offers a straightforward method to tailor the Schottky barrier height over a significant range by introducing an insitu substrate pretreatment step available in most sputter equipment.

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.963.506

Authors: Michael Schneider, Laura Stöber, Jens P. Konrath, Florian Patocka, Ulrich Schmid

Institutions: TU Wien, Infineon Technologies (Austria)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W2963562472

FWCI:

Cites: 18

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Related to: 10