Work

Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1−xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect

Year: 2017

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.4983765

Authors: S. Schöche, T. Hofmann, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, P. Kühne, K. Lorenz, M. Schubert, V. Darakchieva

Institutions: University of Nebraska–Lincoln, Linköping University, University of Lisbon, Instituto Superior Técnico, Leibniz Institute of Polymer Research

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Stiftelsen för Strategisk Forskning, VINNOVA, Vetenskapsrådet

Awards: G1047169464, Terahertz ellipsometri på höghastighetselektronik material, G1853700936, Development of AlN semiconductor material for energy and environment, Terahertz optical Hall effect in materials for next generation high speed and high power electronics (TeraNext), THz ellipsometry and Optical Hall effect: Unraveling the electronic and transport properties of grap, MRI: Development of an Optical Hall Effect Instrumentation for non-contact Nanostructure Electrical Characterization, Nebraska 2010-15 RII Project: Nanohybrid Materials & Algal Biology, Materials Research Science and Engineering Center: Quantum and Spin Phenomena in Nanomagnetic Structures, G8152914510, G867058083

OpenAlex ID: W2963674705

FWCI: 1.145

Cites: 49

Cited by: 21

Related to: 10