Work

Thermal characteristic of dark resistivity of InGaAs photoconductive semiconductor switches

Year: 2019

Type: article

Source: Journal of Materials Science Materials in Electronics

DOI: 10.1007/s10854-019-01907-8

Authors: Liqiang Tian, Lin Zhang, Enbang Li, Weili Ji, Josip Horvat, J. C. Cao, We Shi, Chao Zhang

Institutions: Xi'an University of Technology, University of Wollongong, Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Australian Research Council

Awards: Coherent, tuned terahertz photons from nonlinear processes in graphene, G4562749314

OpenAlex ID: W2963754753

FWCI: 0.11

Cites: 37

Cited by: 5

Related to: 10