Work

Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors

Year: 2019

Type: article

Abstract: We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension of Natori’s model and includes transmission probability and drain-channel coupling parameter. The latter parameter gives rise to a theoretical R ON that is significantly larger than those predicted previously. To validate our model, we fabricated n-channel MOSFETs with varying channel lengths. We show the length dependence of these parameters to support a quasi-ballistic description of our devices.

Source: Scientific Reports

DOI: 10.1038/s41598-018-36692-7

Authors: Ji Ung Lee, Ramya Cuduvally, Prathamesh Dhakras, Phung Nguyen, Harold L. Hughes

Institutions: SUNY Polytechnic Institute, United States Naval Research Laboratory

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,790

Funders: National Science Foundation, Defense Threat Reduction Agency, Division of Electrical, Communications and Cyber Systems