Year: 2019
Type: article
Abstract: Spin relaxation properties of π-conjugated organic semiconductors are key indicators of the performance of organic spintronic devices. However, reliable determination of spin relaxation parameters in organic materials is hindered by complex interfacial phenomena at organic/ferromagnetic metal interfaces that couple spin injection with charge injection. Here, we study the spin pumping induced pure spin transport in Permalloy/rubrene/Pt trilayers and determine the spin diffusion length λs = 132 ± 9 nm and the spin relaxation time τs = 3.8 ± 0.5 ms in rubrene films at room temperature by using the inverse spin Hall effect. The determined spin diffusion length λs is found to be almost two times larger than that of ∼46.3 nm at 100 K extracted from rubrene spin valve devices in which charge carrier injection/detection occurs at organic/ferromagnetic metal interfaces. Our results demonstrate experimentally that the efficiency and the rate of spin polarized charge transport through the organic/ferromagnetic metal interface play a dominant role in determining the spin relaxation process of spin valve devices in which charge and spin currents are coupled.
Source: Applied Physics Letters
DOI: 10.1063/1.5108561
Authors: Zhihao Li, Tian Li, Dong-Chen Qi, Wei Tong, Liqiang Xu, Jin Zhu, Zhitao Zhang, Hai Xu, Wenhua Zhang, Yuxian Guo, Feng Chen, Yuyan Han, Liang Cao, Fapei Zhang, Yimin Xiong
Institutions: Anhui Jianzhu University, Chinese Academy of Sciences, High Magnetic Field Laboratory, University of Science and Technology of China, National Synchrotron Radiation Laboratory, Queensland University of Technology, La Trobe University, Changchun Institute of Optics, Fine Mechanics and Physics, Collaborative Innovation Center of Advanced Microstructures
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
Funders: National Natural Science Foundation of China, Chinese Academy of Sciences, State Key Laboratory of Luminescence and Applications, Hefei Center for Physical Science and Technology, Australian Research Council, Natural Science Foundation of Anhui Province, National Key Research and Development Program of China, Development Foundation of Hefei Center for Physical Science and Technology, High Magnetic Field Laboratory, Chinese Academy of Sciences
Awards: G1761583545, G2221496901, Enabling diamond nanoelectronics with metal oxide induced surface doping, 高迁移率给体-受体型半导体共聚物的电荷传输研究, G3303297533, G3502550860, 低维过渡金属硫化物半导体异质结的控制生长研究, G4201241039, 有机自旋电子器件中有机材料结构和界面结构的调控, G5437880832, G7507950849, G7562517599, G7603411715, G7656229095, 有机小分子/铁磁电极自旋界面磁学性质及机理的研究, G8069442945, G8124293339, 在三类层状结构化合物中探索新超导材料的研究, G8225907452, G8878452922
OpenAlex ID: W2965074748