Work

Electronic properties of air-exposed GaN(11-00) and (0001) surfaces after several device processing compatible cleaning steps

Year: 2019

Type: article

Source: Applied Surface Science

DOI: 10.1016/j.apsusc.2019.07.256

Authors: T. Auzelle, F. Ullrich, S. Hietzschold, S. Brackmann, S. Hillebrandt, W. Kowalsky, E. Mankel, R. Lovrincic, S. Fernández-Garrido

Institutions: Paul Drude Institute for Solid State Electronics, Forschungsverbund Berlin, Heidelberg University, Technische Universität Darmstadt, Technische Universität Braunschweig, Universidad Autónoma de Madrid

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funders: Ministerio de Ciencia, Innovación y Universidades, Bundesministerium für Bildung und Forschung, Agencia Estatal de Investigación, European Social Fund

Awards: G1981817838, G2412510140, G2979906561, G4086044061, G4367548075, G703948950, G7183083546

OpenAlex ID: W2965839697

FWCI: 0.559

Cites: 61

Cited by: 10

Related to: 10