Work

Mobility Enhancement of Back-Channel-Etch Amorphous InGaZnO TFT by Double Layers With Quantum Well Structures

Year: 2019

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2019.2932798

Authors: An-Hung Tai, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, C. W. Liu

Institution: National Taiwan University

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Science and Technology, Taiwan

Awards: High Mobility Materials, Process, Stacked Channels, and Thermal Circuit Simulation( II ), ( I )

OpenAlex ID: W2969370751

FWCI: 1.625

Cites: 36

Cited by: 41

Related to: 10