Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers
Year: 2019
Type: article
Abstract: We investigate the transition of the conduction mechanism from band and nearest-neighbor hopping (NNH) conduction to variable-range hopping (VRH) conduction in heavily Al-doped 4H-SiC epilayers with increasing Al concentration (C Al). In a sample with C Al of 1.8 × 1020 cm−3, the dominant conduction mechanisms at high and low temperatures were band and VRH conduction, respectively, whereas in samples with lower C Al values they were band and NNH conduction, respectively, and in samples with higher C Al values VRH conduction was dominant over the entire range of measurement temperatures examined (20–600 K).
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,210
OpenAlex ID: W2969760221