Work

Fabrication GaN nanowires by electrodeless photo-assisted electrochemical etching and wet etching

Year: 2019

Type: article

Source: The Japan Society of Applied Physics

Authors: Michihito Shimauchi, Kazuki Miwa, Masachika Toguchi, Taketomo Sato, Junichi Motohisa

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2972088417

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