Work

Extraction of Trench Capacitance and Reverse Recovery Time of InGaAs Self-Switching Diode

Year: 2019

Type: article

Source: IEEE Transactions on Nanotechnology

DOI: 10.1109/tnano.2019.2939199

Authors: Sahil Garg, Bipan Kaushal, Sanjeev Kumar, Shahrir Rizal Kasjoo, Santanu Mahapatra, Arun K. Singh

Institutions: Punjab Engineering College, Universiti Malaysia Perlis, Indian Institute of Science Bangalore

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Science and Engineering Research Board

OpenAlex ID: W2972413232

FWCI: 0.632

Cites: 41

Cited by: 9

Related to: 10