Work

AC Recombination Velocity in the Back Surface of a Lamella Silicon Solar Cell under Temperature

Year: 2019

Type: article

Abstract: The ac recombination velocity of the excess minority carriers, in the back surface of a silicon solar cell with a vertical junction connected in series, is developed through Einstein’s law giving the diffusion coefficient of minority carriers according to temperature, through mobility. The frequency spectrum of both, amplitude and phase, are produced for the diffusion coefficient and the recombination velocity in the rear face, in order to identify the parameters of equivalent electric models.

Source: Journal of Modern Physics

DOI: 10.4236/jmp.2019.1010082

Authors: Youssou Traore, Ndeye Thiam, Moustapha Thiame, Amary Thiam, Mamadou Lamine Ba, Marcel Sitor Diouf, Ibrahima Diatta, Oulymata Mballo, El Hadji Sow, Mamadou Wade, Grégoire Sissoko

Institutions: Cheikh Anta Diop University, École Polytechnique de Thiès, Ziguinchor University

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: diamond

OpenAlex ID: W2973262192

FWCI: 1.084

Cites: 16

Cited by: 29

Related to: 10