Stress dependent degradation mechanisms on commercially available GaN Normally-Off transistors
Year: 2019
Type: article
Source: Microelectronics Reliability
Institutions: IRT Saint Exupéry, Thales Alenia Space (France)
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Funder: Agence Nationale de la Recherche
Award: SAINT EXUPERY
OpenAlex ID: W2976201577