Work

Dynamic characterization of SiC and GaN devices with BTI stresses

Year: 2019

Type: article

Source: Microelectronics Reliability

DOI: 10.1016/j.microrel.2019.06.081

Authors: J. Ortiz Gonzalez, M. Hedayati, S. Jahdi, B.H. Stark, O. Alatise

Institutions: University of Warwick, University of Bristol

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: Engineering and Physical Sciences Research Council

Award: Reliability, Condition Monitoring and Health Management Technologies for WBG Power Modules

OpenAlex ID: W2976295656

FWCI: 0.806

Cites: 17

Cited by: 14

Related to: 10