Work

Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs

Year: 2019

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2019.2946367

Authors: Hongpeng Zhang, Lei Yuan, Xiaoyan Tang, Jichao Hu, Jianwu Sun, Yimen Zhang, Yuming Zhang, Renxu Jia

Institutions: Xidian University, Xi'an University of Technology, Linköping University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Swedish Foundation for International Cooperation in Research and Higher Education, National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities

Awards: G2631819197, G4383173612, G5147149893, G5368848358, G6277256269

OpenAlex ID: W2980128752

FWCI: 5.987

Cites: 222

Cited by: 219

Related to: 10