Work

Linearity and Efficiency Characterization of AlGaN/GaN and InAlGaN/GaN HEMTs devices using Multi-tone Large Signal Measurements

Year: 2019

Type: conference-paper

Source: European Microwave Conference (EuMC)

DOI: 10.23919/eumc.2019.8910734

Authors: V. Gillet, M. Bouslama, S. Piotrowicz, C. Potier, O. Patard, M. Prigent, J-C. Nallatamby, C. Chang, R. Quere

Institutions: XLIM, Université de Limoges, III V Lab, United Monolithic Semiconductor (France)

Language: English

Topic: Advanced Power Amplifier Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Agence Nationale de la Recherche

Award: COMPREHENSIVE ANALYSIS AND OPTIMIZATION OF TRAPPING PHENOMENA IN GAN-BASED HEMTS FOR THE DEVELOPMENT OF NEXT GENERATION POWER COMPONENTS OPERATING BEYOND 30 GHZ.

OpenAlex ID: W2991565375

FWCI: 1.185

Cites: 10

Cited by: 3

Related to: 10