Work

Strain-engineering the in-plane electrical anisotropy of GeSe monolayers

Year: 2019

Type: article

Source: Physical Chemistry Chemical Physics

DOI: 10.1039/c9cp05058b

Authors: Zongbao Li, Xinsheng Liu, Xia Wang, Yusi Yang, Shun-Chang Liu, Wei Shi, Yong Li, Xiaobo Xing, Ding-Jiang Xue, Jin-Song Hu

Institutions: Tongren University, Henan University, Chinese Academy of Sciences, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, University of Chinese Academy of Sciences, South China Normal University, Key Laboratory of Guangdong Province

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences, Natural Science Foundation of Guizhou Province

Awards: G1529114759, G2418633527, G2953949857, G3168317714, G638906470, 高效硒化亚锗薄膜太阳能电池研究

OpenAlex ID: W2992214932

FWCI: 1.102

Cites: 46

Cited by: 24

Related to: 10