Work

An ab initio study of the structural and optoelectronic properties of AlxGa1−xN (x = 0, 0.125, 0.375, 0.625, 0.875, and 1) semiconductors

Year: 2019

Type: article

Source: Journal of Computational Electronics

DOI: 10.1007/s10825-019-01423-2

Authors: A. Kafi, F. Driss Khodja, F. Saadaoui, S. Chibani, A. Bentayeb, M. Driss Khodja

Institution: Université de Saida Dr Moulay Tahar

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2992496911

FWCI: 0.438

Cites: 49

Cited by: 13

Related to: 10