Work

Raman spectra of GaSe epitaxial layers grown on GaAs substrates and group-theoretical analysis of their vibrational modes

Year: 2019

Type: conference-paper

Abstract: A complete group-theoretical analysis of vibrational modes in ε, β, γ-GaSe polytypes has been performed. Raman spectroscopy data obtained on single crystals of ε-GaSe with a subsequent group-theoretical analysis were used to analyze the Raman spectra low-dimensional GaSe structures. Information was obtained on the structural properties of epitaxial layers and arrays of nanorods of the ε-polytype GaSe grown by molecular beam epitaxy on GaAs (001) substrates.

Source: Journal of Physics Conference Series

DOI: 10.1088/1742-6596/1400/5/055007

Authors: V Yu Davydov, Yu E Kitaev, A N Smirnov, I A Eliseyev, A N Starukhin, P S Avdienko, I V Sedova, S V Sorokin

Institution: Ioffe Institute

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W2994874529

FWCI:

Cites: 8

Cited by: 1

Related to: 10