Work

Monitoring the growth of III-nitride materials by plasma assisted molecular beam epitaxy employing diffuse scattering of RHEED

Year: 2019

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/1.5124048

Authors: Sayantani Sen, Suchismita Paul, Chirantan Singha, Anirban Saha, Alakananda Das, Pushan Guha Roy, Pallabi Pramanik, Anirban Bhattacharyya

Institutions: University of Calcutta, Indian Institute of Engineering Science and Technology, Shibpur

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Department of Science and Technology, Ministry of Science and Technology, India, Council of Scientific and Industrial Research, India, University Grants Commission, Ministry of Electronics and Information technology, Science and Engineering Research Board

Awards: G5068898978, G634202491, G645249307, G948155130, G96998661

OpenAlex ID: W2994974286

FWCI: 0.223

Cites: 29

Cited by: 9

Related to: 10