Extended Gate Ion-Sensitive Field-Effect Transistors Using Al2O3/Hexagonal Boron Nitride Nanolayers for pH Sensing
Year: 2019
Type: article
Source: ACS Applied Nano Materials
Institutions: National University of Singapore, Shenzhen University
Language: English
Subfield: Analytical Chemistry
Field: Chemistry
Domain: Physical Sciences
Open Access status: closed
Awards: G1731852086, G3498282106
OpenAlex ID: W2995650685