Work

Initial growth analysis of ALD Al 2 O 3 film on hydrogen-terminated Si substrate via in situ XPS

Year: 2019

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.7567/1347-4065/ab6273

Authors: Hiroyuki Fukumizu, Makoto Sekine, Masaru Hori, Paul C. McIntyre

Institutions: Toshiba (Japan), Center for Low-temperature Plasma Sciences, Nagoya University, Nagoya University, Stanford University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Award: Development of "super-bio-functions" by plasma-activated biological substances

OpenAlex ID: W2995891083

FWCI: 0.542

Cites: 51

Cited by: 16

Related to: 10