Work

Biosensors based on nanowire field effect transistors with Schottky contacts

Year: 2019
Type: conference-paper
Abstract: A top-down nanofabrication approach was used to obtain silicon nanowires from silicon-on-insulator wafers using direct-write electron beam lithography and plasma-reactive ion etching. Fabricated with designed pattern silicon nanowires are 0.4, 0.8, 2 μm in width and 100 nm in height. The devices can be applied in future medical diagnostic applications as novel biosensors with detection principle based on the changes in electrical characteristics of the silicon nanowires functionalized with thiol-containing molecules.
Language: English
Open Access status: diamond
OpenAlex ID: W2996444787
FWCI: 3.646
Cites: 21
Cited by: 3
Related to: 10