Work

Full-Time Junction Temperature Extraction of IGCT Based on Electrothermal Model and TSEP Method for High-Power Applications

Year: 2020

Type: article

Source: IEEE Transactions on Industrial Electronics

DOI: 10.1109/tie.2019.2962423

Authors: Chaoqun Xu, Biao Zhao, Xiangyu Zhang, Zhengyu Chen, Jiapeng Liu, Wenpeng Zhou, Zhanqing Yu, Rong Zeng

Institution: Tsinghua University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

Funders: National Natural Science Foundation of China, State Grid Corporation of China

Awards: G6929089038, G8962924871

OpenAlex ID: W2998036601

FWCI: 0.674

Cites: 34

Cited by: 24

Related to: 10