Work

Effect of Mo and MoTi Serving as a Barrier Layer for Cu Source/Drain Electrodes on Performances of Amorphous Silicon and IGZO TFTs

Year: 2019

Type: conference-abstract

Source: Proceedings of the International Display Workshops

DOI: 10.36463/idw.2019.0541

Authors: Chuanbao Luo, Qianyi Zhang, Ziran Li, Xuechao Ren, Xiaolong Meng, Dai Tian, Bisheng Mo, Xiaohu Wei, Xialiang Yuan, Shijian Qin

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3000659607

Cites: 2

Cited by:

Related to: 10