Work

Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches

Year: 2020

Type: article

Source: Nature Nanotechnology

DOI: 10.1038/s41565-019-0623-7

Authors: Seungho Kim, Gyuho Myeong, Wongil Shin, Hongsik Lim, Boram Kim, Taehyeok Jin, Sungjin Chang, Kenji Watanabe, Takashi Taniguchi, Sungjae Cho

Institutions: Korea Advanced Institute of Science and Technology, National NanoFab Center, National Institute for Materials Science

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: Ministry of Education, Culture, Sports, Science and Technology, National Research Foundation of Korea, Samsung, Japan Society for the Promotion of Science, National Institute for Materials Science, Core Research for Evolutional Science and Technology

Awards: G3510308925, G369169853, G3808968827, G4443529437, G6876590396

OpenAlex ID: W3000768454

FWCI: 12.33

Cites: 30

Cited by: 210

Related to: 10