Year: 2020
Type: article
Abstract: Passivating contacts are becoming a mainstream option in current photovoltaic industry due to their ability to provide an outstanding surface passivation along with a good conductivity for carrier collection. However, their integration usually requires long annealing steps which are not desirable in industry. In this work we study PECVD as a way to carry out all deposition steps: silicon oxide (SiOx), doped polycrystalline silicon (poly-Si) and silicon nitride (SiNx:H), followed by a single firing step. Blistering of the poly-Si layer has been avoided by depositing (p+) microcrystalline silicon (μc-Si:H). We report on the impact of this deposition step on the SiOx layer deposited by PECVD, and on the passivation properties by comparing PECVD and wet-chemical oxide in this hole-selective passivating contact stack. We have reached iVoc > 690 mV on p-type FZ wafers for wet-chemical SiOx\(p+) μc-Si\SiNx:H with no annealing step.
Source: EPJ Photovoltaics
Institutions: Centre National de la Recherche Scientifique, École Polytechnique, Laboratoire de Physique des Interfaces et des Couches Minces, Électricité de France (France), Institut Photovoltaïque d’Île-de-France, Université de Versailles Saint-Quentin-en-Yvelines, Université Paris-Saclay, Institut Lavoisier de Versailles, Total (France)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,713
Awards: G292648327, G6581192000, G8066769327
OpenAlex ID: W3005032815