Work

Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion

Year: 2019

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm19573.2019.8993625

Authors: Wei Wang, Erika Covi, Yu-Hsuan Lin, Elia Ambrosi, Daniele Ielmini

Institution: Politecnico di Milano

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3005963788

FWCI: 2.811

Cites: 14

Cited by: 13

Related to: 10