Work

Influence of PDA ambient gas on characteristics of n-β-Ga 2 O 3 /Al 2 O 3 /Pt MOS capacitors

Year: 2020

Type: article

Source: The Japan Society of Applied Physics

Authors: Masafumi Hirose, Toshihide Nabatame, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokowa, Yasuo Koide, Hajime Kiyono

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3006557864

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