Work

Electronic states of Ga in SiO 2 by first principles calculations

Year: 2020

Type: article

Source: The Japan Society of Applied Physics

Authors: Yuki Ohuchi, Miki Ogasawara, Takayuki Hirose, Hideaki Matsuyama, Katsunori Ueno, Shinya Takashima

Institution: Fuji Electric (Japan)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3010455503

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