Work

Structural properties of ZnSe/InSe/ZnSe heterostructures grown by molecular beam epitaxy on GaAs(001) substrates

Year: 2020

Type: conference-paper

Abstract: The paper reports on molecular beam epitaxy of ZnSe/InSe/ZnSe quantum well (QW) heterostructures grown on GaAs(001) substrates as well as studies of their structural properties. The structures were characterized by reflection high energy electron diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy techniques. The evolution of surface morphology of QW heterostructures as a function of the InSe thickness has been studied. The quasi van der Waals growth of ZnSe on the InSe(0001) surface has been demonstrated, with the ZnSe(111) plane being oriented parallel to the (0001) plane of InSe because of a small lattice mismatch between InSe and ZnSe(111).

Source: Journal of Physics Conference Series

DOI: 10.1088/1742-6596/1482/1/012006

Authors: P S Avdienko, D A Kirilenko, I V Sedova, S V Sorokin

Institution: Ioffe Institute

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: diamond

Funder: Ministry of Education and Science of the Russian Federation

OpenAlex ID: W3013730516

FWCI: 0.979

Cites: 10

Cited by: 2

Related to: 10